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ES1PB Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte ES1PB
Spiegazioni elettronici  High Current Density Surface Mount Ultrafast Rectifiers
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ES1PB Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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Dimensions in inches
and (millimeters)
0.000 (0.00)
0.012 (0.30)
0.013 (0.35)
0.004 (0.10)
0.018 (0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.036 (0.91)
0.024 (0.61)
0.016 (0.40)
0.032 (0.80)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF
0.105
(2.67)
0.025
(0.635)
0.100
(2.54)
0.030
(0.762)
0.050
(1.27)
Cathode band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.086 (2.18)
0.074 (1.88)
0.087 (2.20)
0.103 (2.60)
Case Style SMP
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
ES1PA
ES1PB
ES1PC
ES1PD
Unit
Device marking code
EA
EB
EC
ED
Maximum reverse voltage
VRM
50
100
150
200
V
Maximum average forward rectified current see Fig.1
IF(AV)
1.0
A
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
IFSM
30
A
Typical thermal resistance (1)
R
θJA
105
R
θJL
15
°C/W
R
θJC
20
Operating junction and Storage temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C
VF
0.865
V
at IF=1A, TJ=25°C
0.920
Maximum reverse current
TJ = 25°C
5.0
µA
at rated VRM(2)
TJ =125°C
IR
500
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A
trr
15
ns
Typical reverse recovery time at
TJ=25°C
25
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
trr
30
ns
Typical reverse recovery time at
TJ=25°C
8
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Qrr
10
nC
Typical junction capacitance at 4.0V, 1MHz
CJ
10
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R
θJL is measured at the ter-
minal of cathode band. R
θJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Features
• Very low profile - typical height of 1.0mm
• For surface mount application
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Built in strain relief, ideal for automated placement
• High temperature soldering:
260°C maximum/10 seconds at terminals
• Meets MSL level 1 per J-STD-020C
Mechanical Data
Case: SMP
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Reverse Voltage 50 to 200 V
Forward Current 1.0 A
Reverse Recovery Time 15 ns
Document Number 88918
www.vishay.com
23-Sep-04
1
New Product


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