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2SD1044 Datasheet(Scheda tecnica) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD1044
Dettagli  SPTECH Silicon NPN Darlington Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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 2 page
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Darlington Power Transistor
2SD1044
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCER
Collector-Emitter Breakdown Voltage
IC= 50mA, RBE= 1kΩ
100
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 30mA, IB= 0
80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A, IB= 30mA
1.7
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
mA
hFE
DC Current Gain
IC= 1A; VCE= 4V
700
10000
hFE classifications
Q
P
O
700-2500
2000-5000
4000-10000




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