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2SD1044 Datasheet(Scheda tecnica) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD1044
Dettagli  SPTECH Silicon NPN Darlington Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlington Power Transistor
2SD1044
DESCRIPTION
·
High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
·
High Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
·
Wide Area of Safe Operation
APPLICATIONS
·
Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
@TC=25℃
60
W
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150




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