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2SD1027 Datasheet(Scheda tecnica) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD1027
Dettagli  SPTECH Silicon NPN Darlington Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlington Power Transistor
2SD1027
DESCRIPTION
·
High DC Current Gain
: hFE= 1500(Min.)@ IC= 10A, VCE= 3V
·
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
APPLICATIONS
·
Designed for general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
22
A
IB
Base Current- Continuous
1
A
IBM
Base Current- Peak
2
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.25
/W




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