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2SD1022 Datasheet(Scheda tecnica) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD1022
Dettagli  SPTECH Silicon NPN Darlington Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlington Power Transistor
2SD1022
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·
High DC Current Gain
: hFE= 1500(Min) @IC= 3A
·
Low Saturation Voltage
APPLICATIONS
·
Designed for general purpoe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
8
A
IB
Base Current-Continuous
0.5
A
IBM
Base Current-Peak
1
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
4.17
/W




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