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MMG3012NT1 Datasheet(Scheda tecnica) 3 Page - NXP Semiconductors

Numero della parte MMG3012NT1
Dettagli  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Produttore  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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MMG3012NT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
VCC =5 Vdc
10
25
0
TC =85C
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
20
15
12
34
25C
--40C
4
--40
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Return Loss versus
Frequency
S11
--10
--20
--30
12
3
20
7
21
10
Pout, OUTPUT POWER (dBm)
Figure 4. Small--Signal Gain versus Output
Power
19
17
15
13
11
12
14
9
3.5
3
2.5
2
1.5
1
0.5
13
20
19
18
16
14
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
17
15
5.4
0
100
4
VCC, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
80
60
20
4.2
5
5.2
40
4.4
4.6
4.8
4
21
36
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
33
30
27
24
12
3
18
16
VCC =5 Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
VCC =5 Vdc
VCC =5 Vdc
VCC =5 Vdc
1 MHz Tone Spacing




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