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MMG3011NT1 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte MMG3011NT1
Spiegazioni elettronici  Heterojunction Bipolar Transistor (InGaP HBT)
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

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MMG3011NT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
5
20
0
TC =85C
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
15
10
12
3
4
25C
--40C
4
--40
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Return Loss versus
Frequency
S11
--10
--20
--30
12
3
15
10
17
5
Pout, OUTPUT POWER (dBm)
Figure 4. Small--Signal Gain versus Output
Power
16
15
14
13
12
7
11
3.5
3
2.5
2
1.5
1
0.5
10
17
16
15
13
11
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
14
12
5.4
0
80
4
VCC, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
60
40
10
4.2
5
5.2
20
4.4
4.6
4.8
4
15
30
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
27
24
21
18
12
3
VCC =5 Vdc
1 MHz Tone Spacing
11
VCC =5 Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
50
30
913
70
VCC =5 Vdc
VCC =5 Vdc
VCC =5 Vdc


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