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MMG3009NT1 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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MMG3009NT1 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2 RF Device Data Freescale Semiconductor, Inc. MMG3009NT1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 14.3 15 — dB Input Return Loss (S11) IRL — --13 — dB Output Return Loss (S22) ORL — --17 — dB Power Output @ 1dB Compression P1dB — 18 — dBm Third Order Output Intercept Point OIP3 — 34 — dBm Noise Figure NF — 4.2 — dB Supply Current ICC 58 70 82 mA Supply Voltage VCC — 5 — V Table 5. Functional Pin Description Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1A Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 C Figure 1. Functional Diagram 3 2 1 2 |
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