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2SD960 Datasheet(Scheda tecnica) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD960
Dettagli  SPTECH Silicon NPN Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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 2 page
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
2SD960
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3.0A; IB= 0.15A
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.15A
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
μ
A
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
60
260
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
30
MHz
Switching times
ton
Turn-on Time
IC= 1A, IB1=IB2= 0.1A
0.5
μ
s
tstg
Storage Time
2.5
μ
s
tf
Fall Time
0.15
μ
s
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260




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