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2SD692 Datasheet(Scheda tecnica) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

Numero della parte 2SD692
Dettagli  SPTECH Silicon NPN Darlingtion Power Transistor
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Produttore  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
Homepage  http://www.superic-tech.com/
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlingtion Power Transistor
2SD692
DESCRIPTION
·
Built-in Base-Emitter Shunt Resistors
·
High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc
·
Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·
Wide Area of Safe Operation
APPLICATIONS
·
Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
6
A
IB
Base Current -Continuous
3
A
PC
Collector Power Dissipation@TC=25℃
50
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150




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