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FDG327NZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG327NZ
Spiegazioni elettronici  20V N-Channel PowerTrench MOSFET
Download  5 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG327NZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDG327NZ Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
11
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
± 8 V,
VDS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.4
0.7
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 1.5 A
VGS = 2.5 V,
ID = 1.4 A
VGS = 1.8 V,
ID = 1.2 A
VGS = 4.5 V, ID = 1.5 A, TJ =125
°C
68
77
90
86
90
100
140
123
m
ID(on)
On–State Drain Current
VGS = 4.5V,
VDS = 5 V
3
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 1.5 A
2.2
S
Dynamic Characteristics
Ciss
Input Capacitance
412
pF
Coss
Output Capacitance
81
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V
f = 1.0 MHz
44
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.9
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
13
23
ns
tr
Turn–On Rise Time
12
22
ns
td(off)
Turn–Off Delay Time
33
53
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
18
20
ns
Qg
Total Gate Charge
4.2
6
nC
Qgs
Gate–Source Charge
0.4
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 1.5 A,
VGS = 4.5 V
1
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.32 A (Note 2)
0.6
1.2
V
trr
Diode Reverse Recovery Time
IF = 1.5 A,
diF/dt = 100 A/µs
4
nS
Qrr
Diode Reverse Recovery Charge
2
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
300°C/W when
mounted on a 1in
2 pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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