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FDG327NZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG327NZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDG327NZ Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 11 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.7 1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.4 A VGS = 1.8 V, ID = 1.2 A VGS = 4.5 V, ID = 1.5 A, TJ =125 °C 68 77 90 86 90 100 140 123 m Ω ID(on) On–State Drain Current VGS = 4.5V, VDS = 5 V 3 A gFS Forward Transconductance VDS = 10 V, ID = 1.5 A 2.2 S Dynamic Characteristics Ciss Input Capacitance 412 pF Coss Output Capacitance 81 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V f = 1.0 MHz 44 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 13 23 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 33 53 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 18 20 ns Qg Total Gate Charge 4.2 6 nC Qgs Gate–Source Charge 0.4 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 1.5 A, VGS = 4.5 V 1 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.32 A (Note 2) 0.6 1.2 V trr Diode Reverse Recovery Time IF = 1.5 A, diF/dt = 100 A/µs 4 nS Qrr Diode Reverse Recovery Charge 2 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 300°C/W when mounted on a 1in 2 pad of 2 oz copper. b) 333°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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