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FDC6432SH Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDC6432SH Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDC6432SH Rev B (W) Electrical CharacteristicsT A = 25°C unless otherwise noted Symbol Parameter Test Conditions Q Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = –250 µA Q1 Q2 30 –12 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Ref to 25°C ID = –250 µA, Ref to 25°C Q1 Q2 25 –10 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = –10 V, VGS = 0 V Q1 Q2 500 1 µA IGSS Gate-Body Leakage VGS = ±16 V, VDS = 0 V VGS = ±8 V, VDS = 0 V Q1 Q2 ±100 ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = –250 µA Q1 Q2 1 –0.4 1.5 –0.7 3 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Ref to 25°C ID = –250 µA, Ref to 25°C Q1 Q2 –7 3 mV/°C RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.2A VGS=10V,ID=2.4A,TJ=125°C Q1 75 85 100 90 105 140 m Ω RDS(on) Static Drain-Source On-Resistance VGS = –4.5V, ID = –2.5A VGS = –2.5V, ID = –2.0A VGS = –1.8V, ID = –1.6A VGS=–4.5V,ID=2.5A,TJ=125°C Q2 75 97 154 86 90 125 220 120 m Ω gFS Forward Transconductance VDS = 10 V, ID = 1 mA VDS = –5 V ID = –2.5A Q1 Q2 7 7 S RG Gate Resistance VGS = 15 mV, f = 1.0 MHz Q1 Q2 5 13 Ω Dynamic Characteristics Ciss Input Capacitance Q1 Q2 270 514 pF Coss Output Capacitance Q1 Q2 50 234 pF Crss Reverse Transfer Capacitance For Q1: VDS=15V, VGS=0V, f=1MHz For Q2: VDS= –6V, VGS=0V, f=1MHz Q1 Q2 20 167 pF Switching Characteristics (Note 2) td(on) Turn-on Delay Time Q1 Q2 5 13 10 23 ns tr Turn-on Rise Time Q1 Q2 8 12 16 22 ns td(off) Turn-off Delay Time Q1 Q2 18 22 32 35 ns tf Turn-off Fall Time For Q1: VDS = 15 V, ID= 1 A, VGS = 10 V, RGEN = 6 Ω For Q2: VDS = –10 V, ID= –1 A, VGS = –4.5 V, RGEN = 6 Ω Q1 Q2 1.2 29 2.4 46 ns Qg Total Gate Charge Q1 Q2 2.5 5.7 3.5 8 nC Qgs Gate-Source Charge Q1 Q2 0.7 1.2 nC Qgd Gate-Drain Charge For Q1: VDS = 15 V, ID= 2.4 A, VGS = 5 V For Q2: VDS = –10 V, ID= –2.5 A, VGS = –4.5 V Q1 Q2 0.6 1.7 nC |
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