(SEE REVERSE SIDE)

R3

BCY78, VII, VIII, IX, X

BCY79, VII, VIII, IX, X

PNP SILICON TRANSISTOR

JEDEC TO-18 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,

mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

SYMBOL

BCY78

BCY79

UNITS

Collector-Base Voltage

VCBO

32

45

V

Collector-Emitter Voltage

VCEO

32

45

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

100

mA

Collector Current (Peak)

ICM

200

mA

Base Current (Peak)

IBM

200

mA

Power Dissipation

PD

340

mW

Power Dissipation(TC=25°C)

PD

1.0

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

450

°C/W

Thermal Resistance

ΘJC

150

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB= Rated VCBO

15

nA

ICBO

VCB= Rated VCBO, TA=150°C

10

µA

IEBO

VEB=5.0V

20

nA

BVCBO

IC=10µA (BCY78)

32

V

BVCBO

IC=10µA (BCY79)

45

V

BVCEO

IC=2.0mA (BCY78)

32

V

BVCEO

IC=2.0mA (BCY79)

45

V

BVEBO

IE=1.0µA

5.0

V

VCE(SAT)

IC=10mA, IB=250µA

0.25

V

VCE(SAT)

IC=100mA, IB=2.5mA

0.80

V

VBE(SAT)

IC=10mA, IB=250µA

0.60

0.85

V

VBE(SAT)

IC=100mA, IB=2.5mA

0.70

1.20

V

VBE(ON)

VCE=5.0V, IC=2.0mA

0.60

0.75

V

BCY78-VII

BCY78-VIII

BCY78-IX

BCY78-X

BCY79-VII

BCY79-VIII

BCY79-IX

BCY79-X

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=5.0V, IC=10µA

140 TYP

30

40

100

hFE

VCE=5.0V, IC=2.0mA

120

220

180

310

250

460

380

630

hFE

VCE=1.0V, IC=10mA

80

120

400

160

630

240

1000

hFE

VCE=1.0V, IC=100mA

40

45

60

60