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TB100 Scheda tecnica(PDF) 6 Page - WeEn Semiconductors |
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TB100 Scheda tecnica(HTML) 6 Page - WeEn Semiconductors |
6 / 10 page WeEn Semiconductors TB100 NPN power transistor TB100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 30 September 2016 6 / 10 10-3 10 1 10-2 10-1 10 102 1 IC (A) hFE Tj = 125 °C Tj = -35 °C Tj = 25 °C VCE = 1 V aaa-010368 Fig. 5. DC current gain as a function of collector current; typical values aaa-010120 10-3 10 1 10-2 10-1 10 102 1 IC (A) hFE Tj = 125 °C Tj = -35 °C Tj = 25 °C VCE = 5 V Fig. 6. DC current gain as a function of collector current; typical values 001aab990 IC IB 10 % 10 % 90 % 90 % ton toff ts tf t t IBon - IBoff ICon tr ≤ 30 ns Fig. 7. Switching times waveforms for resistive load 001aab989 tp RB VIM 0 RL DUT VCC T Fig. 8. Test circuit for resistive load switching |
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