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PHE13005 Scheda tecnica(PDF) 3 Page - WeEn Semiconductors |
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PHE13005 Scheda tecnica(HTML) 3 Page - WeEn Semiconductors |
3 / 13 page WeEn Semiconductors PHE13005 Silicon diffused power transistor PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 30 March 2018 3 / 13 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit VCESM peak collector-emitter voltage VBE = 0 V 700 V VCBO collector-base voltage IE = 0 A 700 V VCEO collector-emitter voltage IB = 0 A 400 V IC collector current DC; Fig. 1; Fig. 2; Fig. 4 4 A ICM peak collector current 8 A IB base current DC 2 A IBM peak base current 4 A Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 75 W Tstg storage temperature -65 to 150 °C Tj junction temperature 150 °C VEBO emitter-base voltage IC = 0 A 9 V VCL(CE) ≤ 1000V; VCC = 150 V; VBB = -5 V; LC = 200 μH; LB = 1 μH Fig. 1. Test circuit for reverse bias safe operating area Tj ≤ Tj (max) °C Fig. 2. Reverse bias safe operating area |
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