PHE13005 datasheet(3/13 Pages) WEEN

Il numero della parte	PHE13005

Spiegazioni elettronici	Silicon diffused power transistor

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WeEn Semiconductors

PHE13005

Silicon diffused power transistor

PHE13005

Product data sheet

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30 March 2018

3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

VCESM

peak collector-emitter

voltage

VBE = 0 V

700

V

VCBO

collector-base voltage

IE = 0 A

700

V

VCEO

collector-emitter voltage

IB = 0 A

400

V

IC

collector current

DC; Fig. 1; Fig. 2; Fig. 4

4

A

ICM

peak collector current

8

A

IB

base current

DC

2

A

IBM

peak base current

4

A

Ptot

total power dissipation

Tmb ≤ 25 °C; Fig. 3

75

W

Tstg

storage temperature

-65 to 150

°C

Tj

junction temperature

150

°C

VEBO

emitter-base voltage

IC = 0 A

9

V

VCL(CE) ≤ 1000V; VCC = 150 V; VBB = -5 V;

LC = 200 μH; LB = 1 μH

Fig. 1. Test circuit for reverse bias safe operating area

Tj ≤ Tj (max) °C

Fig. 2. Reverse bias safe operating area

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