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1PS79SB17 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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1PS79SB17 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 4 of 8 Philips Semiconductors 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values. Fig 2. Reverse current as a function of reverse voltage; typical values. Tamb =25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values. 006aaa077 10−1 1 10 102 IF (mA) 10−2 VF (V) 0 0.8 0.6 0.2 0.4 (3) (4) (2) (1) 006aaa078 IR (nA) 1 10−2 10−1 104 103 102 10 105 10−3 VR (V) 04 3 12 (4) (3) (2) (1) 01 2 3 4 0.4 0.8 mlc797 0.7 0.6 0.5 VR (V) Cd (pF) |
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