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1PS79SB17 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte 1PS79SB17
Spiegazioni elettronici  4 V, 30 mA low Cd Schottky barrier diode
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS79SB17 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 — 4 April 2005
4 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
(1) Tamb = 150 °C
(2) Tamb =85 °C
(3) Tamb =25 °C
(4) Tamb = −40 °C
(1) Tamb = 150 °C
(2) Tamb =85 °C
(3) Tamb =25 °C
(4) Tamb = −40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values.
Fig 2.
Reverse current as a function of reverse
voltage; typical values.
Tamb =25 °C; f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values.
006aaa077
10−1
1
10
102
IF
(mA)
10−2
VF (V)
0
0.8
0.6
0.2
0.4
(3)
(4)
(2)
(1)
006aaa078
IR
(nA)
1
10−2
10−1
104
103
102
10
105
10−3
VR (V)
04
3
12
(4)
(3)
(2)
(1)
01
2
3
4
0.4
0.8
mlc797
0.7
0.6
0.5
VR (V)
Cd
(pF)


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