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BC490A Scheda tecnica(PDF) 1 Page - ON Semiconductor

Il numero della parte BC490A
Spiegazioni elettronici  High Current Transistors(PNP Silicon)
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–80
Vdc
Collector – Base Voltage
VCBO
–80
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–80
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CBO
–80
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–4.0
Vdc
Collector Cutoff Current
(VCB = –60 Vdc, IE = 0)
ICBO
–100
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = –10 mAdc, VCE = –2.0 Vdc)
(IC = –100 mAdc, VCE = –2.0 Vdc)
BC490
BC490A
(IC = –1.0 Adc, VCE = –5.0 Vdc)
hFE
40
60
100
15
140
400
250
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle 2%.
Order this document
by BC490/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC490,A
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER


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