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IRF1010EZ Scheda tecnica(PDF) 4 Page - International Rectifier |
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IRF1010EZ Scheda tecnica(HTML) 4 Page - International Rectifier |
4 / 12 page IRF1010EZ/S/LPbF 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 102030405060 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 48V VDS= 30V VDS= 12V ID= 51A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) 0.10 1.00 10.00 100.00 1000.00 TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 10000 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec Tc = 25°C Tj = 175°C Single Pulse |
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