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SI1865DL Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI1865DL Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page 1.8V Rated Si1865DL Vishay Siliconix New Product Document Number: 71297 S-02987—Rev. B, 29-Jan-01 www.vishay.com 1 Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) rDS(on) (W) ID (A) 0.215 @ VIN = 4.5 V "1.2 1.8 to 8 0.300 @ VIN = 2.5 V "1.0 0.440 @ VIN = 1.8 V "0.7 FEATURES D 215-mW Low rDS(on) TrenchFETR D 1.8 to 8-V Input D 1.5 to 8-V Logic Level Control D Low Profile, Small Footprint SC70-6 Package D 2000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate DESCRIPTION The Si1865DL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1865DL operates on supply lines from 1.8 to 8 V, and can drive loads up to 1.2 A. APPLICATION CIRCUITS Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW 0 4 8 12 16 20 0 2468 10 R2 (k W) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) td(off) tf Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics VOUT GND LOAD VIN ON/OFF R2 R2 1 2, 3 C1 6 4 6 5 R1 Q1 Q2 Si1865DL Co Ci COMPONENTS R1 Pull-Up Resistor Typical 10 k W to 1 mW* R2 Optional Slew-Rate Control Typical 0 to 100 k W* C1 Optional Slew-Rate Control Typical 1000 pF *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. |
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