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GD25D05CEJG Scheda tecnica(PDF) 27 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25D05CEJG Scheda tecnica(HTML) 27 Page - GigaDevice Semiconductor (Beijing) Inc. |
27 / 42 page 3.3V Uniform Sector Standard and Dual Serial Flash GD25D10C/05C 27 (T= -40℃~125℃, VCC=2.7~3.6V) Symbol Parameter Test Condition Min. Typ. Max. Unit. ILI Input Leakage Current ±2 μA ILO Output Leakage Current ±2 μA ICC1 Standby Current CS#=VCC, VIN=VCC or VSS 0.1 15 μA ICC2 Deep Power-Down Current CS#=VCC, VIN=VCC or VSS 0.1 15 μA ICC3 Operating Current (Read) CLK=0.1VCC / 0.9VCC At 100MHz, Q=Open(*1 I/O) 3 18 mA CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1 I/O,*2 Output) 2.5 15 mA ICC4 Operating Current (PP) CS#=VCC 20 mA ICC5 Operating Current (WRSR) CS#=VCC 20 mA ICC6 Operating Current (SE) CS#=VCC 20 mA ICC7 Operating Current (BE) CS#=VCC 20 mA ICC8 Operating Current (CE) CS#=VCC 20 mA VIL Input Low Voltage -0.5 0.2VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage IOL = 100μA 0.4 V VOH Output High Voltage IOH =- 100μA VCC-0.2 V Note: 1. Typical values given for TA=25°C VCC = 1.8V. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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