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GD25D10CPFG Datasheet(Scheda tecnica) 23 Page - GigaDevice Semiconductor (Beijing) Inc.

Numero della parte GD25D10CPFG
Dettagli  3.3V Uniform Sector Standard and Dual Serial Flash
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Produttore  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Homepage  http://www.gigadevice.com/
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 23 page
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3.3V Uniform Sector
Standard and Dual Serial Flash
GD25D10C/05C
23
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure19. Power-On Timing Sequence Diagram
Table 3. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL
VCC (min.) to device operation
0.3
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
VPWD
VCC voltage needed to below VPWD for ensuring initialization will occur
0.5
V
tPWD
The minimum duration for ensuring initialization will occur
300
us
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0).
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
-40 to 105
-40 to 125
Storage Temperature
-65 to 150
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
VCC
-0.6 to 4.2
V
VCC(max.)
VCC(min.)
tVSL
Chip Selection is not allowed
Full Device
Access
Allowed
Time
VPWD(max.)
tPWD
VCC




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