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GD25LB32D Scheda tecnica(PDF) 22 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LB32D Scheda tecnica(HTML) 22 Page - GigaDevice Semiconductor (Beijing) Inc. |
22 / 67 page 1.8V Uniform Sector Dual and Quad Serial Flash GD25LB32D 22 7.6. Read Data Bytes (READ) (03H) The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), and each bit is latched-in on the rising edge of SCLK. Then the memory content at that address is shifted out on SO, and each bit is shifted out, at a Max frequency fR, on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure7. Read Data Bytes Sequence Diagram Command 0 1 2 3 4 5 6 7 03H CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 32 MSB 3 2 1 0 34 35 36 37 33 23 22 21 7 6 5 4 3 2 1 0 38 39 24-bit address MSB Data Out1 Data Out2 7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC, on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure8. Read Data Bytes at Higher Speed Sequence Diagram Command 0 1 2 3 4 5 6 7 0BH CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address MSB 34 35 36 37 33 6 5 4 3 2 1 0 38 39 Data Out1 32 42 43 44 45 41 46 47 40 7 6 5 4 3 2 1 0 7 6 5 7 Data Out2 CS# SCLK SI SO MSB Dummy Byte |
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