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GD25D80C Scheda tecnica(PDF) 31 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25D80C Scheda tecnica(HTML) 31 Page - GigaDevice Semiconductor (Beijing) Inc. |
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31 / 42 page  3.3V Uniform Sector Standard and Dual Serial Flash GD25D80C 31 (T= -40℃~105℃, VCC=2.7~3.6V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit fC Serial Clock Frequency For: Fast read (0B) 100 MHz fR Serial Clock Frequency For: Read (03H) ,Dual Output (3BH) 80 MHz tCLH Serial Clock High Time 4 ns tCLL Serial Clock Low Time 4 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 40 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 0 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tCLQV Clock Low To Output Valid 6 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 0.1 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 0.1 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 0.1 μs tW Write Status Register Cycle Time 4 30 ms tBP1 Byte Program Time(First Byte) 30 60 μs tBP2 Addition Byte Program Time(After First Byte) 2.5 15 μs tPP Page Programming Time 0.7 4.0 ms tSE Sector Erase Time 100 400 ms tBE1 Block Erase Time (32K Bytes) 0.3 1.2 s tBE2 Block Erase Time (64K Bytes) 0.5 2.0 s tCE Chip Erase Time (GD25D80C) 8 20 s Note: 1. Typical values given for TA=25°C VCC = 1.8V. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
Codice articolo simile - GD25D80C |
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Descrizione simile - GD25D80C |
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