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GD9FU1G8F2AMG Datasheet(Scheda tecnica) 39 Page - GigaDevice Semiconductor (Beijing) Inc.

Numero della parte GD9FU1G8F2AMG
Dettagli  Single level cell technology
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Produttore  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Homepage  http://www.gigadevice.com/
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GD9Fx1GxF2A
39
8.7 Ready/Busy# (R/B#)
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase, copy-
back and random read completion. The R/B# pin is normally high and goes to low when the device is busy (after a reset,
read, program, and erase operation). It returns to high when the internal controller has finished the operation. The pin is an
open-drain driver thereby allowing two or more R/B# outputs to be Or-tied. Because pull-up resistor value is related to tR
(R/B#), an appropriate value can be obtained with the following reference below chart. Its value can be determined by the
following guidance.
Vcc
GND
Device
Rp
R/B#
Open drain output
Ready
Vcc
tf
VOL
Busy
VOL : 0.4V, VOH : 2.4V
tr
VOH
tf
160
108.8
69.8
35
tr
50
100
200
Rp(ohm)
1K
2K
3K
4K
Fig. Rp vs tr, tf & Rp
@ Vcc = 3.3 V, Ta = 25ºC,CL=50pF
Rp (min) =
Rp value guidence
Vcc (Max.)
– V
OL (Max.)
IOL + ΣIL
=
3.2V
8mA + ΣIL
Where IL is the sum of the input curmts of all devices tied to the R/B# pin.
Rp(max) is determined by maximum permissible limit of tr
5K
182
150
3.84
3.66
3.22
3.76
3.86
Figure 29: Ready/Busy figures




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