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KM23V32005BG Scheda tecnica(PDF) 1 Page - Samsung semiconductor |
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KM23V32005BG Scheda tecnica(HTML) 1 Page - Samsung semiconductor |
1 / 5 page KM23V32005BG CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode function, page read mode allows 8 words(or 16 bytes) of data to read fast in the same page, CE and A3 ~ A20 should not be changed. This device operates with a 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V32005BG is packaged in a 44-SOP. GENERAL DESCRIPTION FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access • Supply voltage : single +3.3V • Current consumption Operating : 60mA(Max.) Standby : 30 µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package KM23V32005BG : 44-SOP-600 A20 X A0~A2 AND DECODER BUFFERS A3 Y AND DECODER BUFFERS MEMORY CELL SENSE AMP. CONTROL LOGIC MATRIX (2,097,152x16/ 4,194,304x8) DATA OUT BUFFERS A-1 CE OE BHE . . . . . . . . Q0/Q8 Q7/Q15 . . . PIN CONFIGURATION N.C A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE Q0 Q8 Q1 Q9 Q4 Q12 Q5 Q13 Q6 VSS Q14 Q7 Q15/A-1 SOP KM23V32005BG FUNCTIONAL BLOCK DIAGRAM 1 2 44 43 3 4 42 41 5 6 40 39 7 8 38 37 9 10 36 35 11 12 34 33 13 14 32 31 15 16 30 29 17 18 28 27 19 20 26 25 21 22 24 23 Q2 Q10 Q3 Q11 A20 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VCC Pin Name Pin Function A0 - A2 Page Address Inputs A3 - A20 Address Inputs Q0 - Q14 Data Outputs Q15 /A-1 Output 15(Word mode)/ LSB Address(Byte mode) BHE Word/Byte selection CE Chip Enable OE Output Enable VCC Power (3.3V) VSS Ground N.C No Connection |
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