EMD04N06H datasheet(1/6 Pages) EXCELLIANCE

Il numero della parte	EMD04N06H

Spiegazioni elettronici	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Produttore elettronici	EXCELLIANCE [Excelliance MOS Corp.]

Homepage	http://www.excelliancemos.com/

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2014/8/14

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EMD04N06H

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

RDSON (MAX.)

5mΩ

ID

75A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

75

A

TC = 100 °C

45

Pulsed Drain Current

1

IDM

160

Avalanche Current

IAS

70

Avalanche Energy

L = 0.1mH, ID=70A, RG=25Ω

EAS

245

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

122

Power Dissipation

TC = 25 °C

PD

50

W

TC = 100 °C

20

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

2.5

°C / W

Junction‐to‐Ambient

RJA

62

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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