EMD02N60CS datasheet(4/5 Pages) EXCELLIANCE

Il numero della parte	EMD02N60CS

Spiegazioni elettronici	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Produttore elettronici	EXCELLIANCE [Excelliance MOS Corp.]

Homepage	http://www.excelliancemos.com/

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4 / 5 page

2013/10/22

p.4

EMD02N60CS

2

V ,Gate‐Source Voltage( V )

0

3

1

4

GS

DS

V = 10V

2

4

5

3

5

6

7

A

Transfer Characteristics

T = ‐55 °C

25 °C

125 °C

Body Diode Forward Voltage Variation

with Source Current and Temperature

25°C

T = 125°C

V ‐ Body Diode Forward Voltage( V )

0.001

0

0.01

0.1

0.4

SD

0.2

0.6

V = 0V

1

10

100

A

GS

1.0

0.8

1.2

‐55°C

1.4

50

All o w a b l e Pow e r Di s s i p a t io n

0

10

20

c

0

25

40

30

50

60

150

100

75

125

T ,C a s e Te m p e r at u r e ( °C )

50

On‐Resistance Variation with Temperature

0.6

‐50

0.8

1.0

j

‐25

0

25

1.4

1.2

1.6

1.8

150

100

75

125

T ,Junction Temperature(°C )

50

Gate Threshold Voltage v.s. Temperature

0

‐50

1.0

2.0

j

‐25

0

25

4.0

3.0

5.0

6.0

150

100

75

125

T ,Junction Temperature(°C )

V ,Drain‐Source Voltage( V )

Typical Output Characteristics

2

10

0

1

30

DS

20

40

10V

4

3

5

Vgs=20V

7.5V

50

60

7V

8V

TYPICAL CHARACTERISTICS

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