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EMD02N60AK Scheda tecnica(PDF) 2 Page - Excelliance MOS Corp.

Il numero della parte EMD02N60AK
Spiegazioni elettronici  N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
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Produttore elettronici  EXCELLIANCE [Excelliance MOS Corp.]
Homepage  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMD02N60AK Scheda tecnica(HTML) 2 Page - Excelliance MOS Corp.

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2015/3/27 
p.2 
EMD02N60AK
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) 
PARAMETER 
SYMBOL
TEST CONDITIONS 
LIMITS 
UNIT
MIN  TYP
MAX
STATIC 
Drain‐Source Breakdown Voltage 
V(BR)DSS 
VGS = 0V, I= 250A 
600  
 
Gate Threshold Voltage 
VGS(th) 
VDS = VGS, ID = 250A 
Gate‐Body Leakage 
IGSS 
VDS = 0V, VGS = ±30V  
 
±100
nA
Zero Gate Voltage Drain Current 
IDSS 
VDS = 600V, VGS = 0V  
 
10 
A
VDS = 480V, VGS = 0V, TJ = 125 °C  
 
25 
Drain‐Source On‐State Resistance
1 
RDS(ON) 
VGS = 10V, ID = 1A  
4.2
5.0 Ω 
Forward Transconductance
1 
gfs 
VDS = 25V, ID = 1A  
1  
DYNAMIC 
Input Capacitance 
Ciss  
VGS = 0V, VDS = 25V, f = 1MHz 
 
365
 
pF
Output Capacitance 
Coss  
34
 
Reverse Transfer Capacitance  
Crss  
8.2
 
Gate Resistance 
Rg 
VGS = 15mV, VDS = 0V, f = 1MHz  
3.2
6.5 Ω 
Total Gate Charge
1,2 
Qg  
VDS = 300V, VGS = 10V, 
ID = 1A 
 
8.2
 
nC
Gate‐Source Charge
1,2 
Qgs  
3.3
 
Gate‐Drain Charge
1,2 
Qgd  
1.7
 
Turn‐On Delay Time
1,2 
td(on)  
 
15
 
nS
Rise Time
1,2 
tr 
VDS = 200V,  
 
30
 
Turn‐Off Delay Time
1,2 
td(off) 
ID = 1.5A, VGS = 10V, RG = 20Ω 
 
20
 
Fall Time
1,2 
tf  
 
40
 
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) 
Continuous Current 
IS  
 
 
Pulsed Current
3 
ISM  
 
 
Forward Voltage
1 
VSD 
IF = IS, VGS = 0V  
 
1.4 
Reverse Recovery Time  
trr 
IF = IS, dlF/dt = 100A / S 
 
0.2
 
S
Reverse Recovery Charge 
Qrr  
 
0.8
 
C
1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 
2Independent of operating temperature. 
3Pulse width limited by maximum junction temperature. 
 


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