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DAM19N80S Scheda tecnica(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

Il numero della parte DAM19N80S
Spiegazioni elettronici  N-Channel Enhancement Mode MOSFET
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Produttore elettronici  DACO [DACO SEMICONDUCTOR CO.,LTD.]
Homepage  http://www.dacosemi.com/
Logo DACO - DACO SEMICONDUCTOR CO.,LTD.

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=250uA
80
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=80V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±25V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=250uA
2
3
4
V
Static Drain-Source On-Resistance
RDS(on)
VGS=10V
IDS=12A
-
10.5
13
Dynamic Characteristics
Input Capacitance
Ciss
VDS=30V
VGS=0V
Freq.=1MHz
-
1810
2700
pF
Output Capacitance
Coss
-
252
380
Reverse Transfer Capacitance
Crss
-
100
150
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=40V
VGS=10V
RG =
IDS=1A
-
22
44
ns
Rise Time
Tr
-
16
32
Turn-Off Delay Time
Td(off)
-
40
80
Fall Time
Tf
-
31
62
Total Gate Charge
Qg
VDS=40V
VGS=10V
IDS=10A
-
31.2
48
nC
Gate to Source Charge
Qgs
-
9
18
Gate to Drain Charge
Qgd
-
9.2
18
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=1A
-
-
1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=60A., Starting TJ=25°C
3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Aug.2018
DAM19N80S


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