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DAM8N100B Scheda tecnica(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM8N100B Scheda tecnica(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
1 / 4 page N-Channel Enhancement Mode MOSFET Features VDSS = 100V RDS(ON) Typ.160mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 100 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID 8 A @ Tc = 100°C 4.8 Drain Current Pulsed@ TC = 25°C IDM 32 A Maximum Power Dissipation PD 32 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case RθJc 3.8 °C/W Aug.2017 DAM8N100B Thermal Resistance Junction to Ambient RθJA 62 °C/W |
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