B647 datasheet(1/3 Pages) JINGDAO

Il numero della parte	B647

Spiegazioni elettronici	PNP Power Transistor

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Produttore elettronici	JINGDAO [Shenzhen Jingdao Electronic Co.,Ltd]

Homepage	http://www.jdsemi.cn/en/

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B647 PNP Power Transistor

：

*Applications

◆

Electronical Ballasts for fluorescent lighting

◆

Charger and Switch mode power supplies

：

*Features

◆

High switching speed

◆

Wide safe operation area

：

Absolute Maximum Ratings

( Tc=25℃

℃

℃ unless specified)

：

Electronical Characteristic

( Tc=25℃

℃

℃ unless specified)

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

BVCEO

≥ -40

V

Collector-Base Voltage

BVCBO

≥ -60

V

Emitter-Base Voltage

BVEBO

≥ -5

V

Collector Current

Icm

-2.0

A

Total Power Dissipation

Pcm

12

W

Junction Temperature

Tjm

150

℃

Storage Temperature

Tstg

～

-55

150

℃

Parameter

Symbol

Test conditions

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

BVCEO

；

I =-1mA

I =0

C

B

-40

V

Collector-Base Breakdown Voltage

BVCBO

；

I =-1mA

I =0

C

E

-60

V

Emitter-Base Breakdown Voltage

BVEBO

；

I =-1mA

I =0

E

C

-5

V

Collector-Emitter cut-off current

ICEO

；

V =-38V

I =0

CE

B

-20

uA

Collector-Base cut-off current

ICBO

；

V =-58V

I =0

CB

E

-10

uA

Emitter-Base cut-off current

IEBO

；

V =-5V

I =0

EB

C

-10

uA

DC Current Gain

HFE

；

V =-3V

I =-300mA

CE

C

120

400

；

V =5V

I =1mA

CE

C

8

Collector-Emitter Saturation Voltage

V

(sat)

CE

；

I =-1A

I =-100mA

C

B

-0.5

V

Storage time

tf

；

I =-1A

I =I =-0.2A

V =-20V

C

B1

B2

CE

0.5

uS

Typical Frequency

fT

；

V =-5V

I =-50mA

f =30MHz

CE

C

50

MHz

深圳市晶导电子有限公司

Shenzhen Jingdao Electronic Co.,Ltd.

：

FAX

0755-29799515

：

TEL

0755-29799516

Http://www.jdsemi.cn

Jingdao Electronic Corporation V01

E.Emitter C.Collector

B.Base

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