H27UCG8T2BTR-BC datasheet(36/56 Pages) HYNIX

Il numero della parte	H27UCG8T2BTR-BC

Spiegazioni elettronici	64Gb(8192M x 8bit) MLC NAND Flash

Download	56 Pages

Scroll/Zoom	100%

Produttore elettronici	HYNIX [Hynix Semiconductor]

Homepage	http://www.skhynix.com/kor/main.do

Logo

36 / 56 page

H27UCG8T2BTR-BC

64Gb(8192M x 8bit) MLC NAND Flash

Rev 0.1 / Oct. 2012

36

3.22. Multi-Plane Cache Program Operation Timings

CLE

WE#

ALE

R/B#

Col.

Add1

80h

Col.

Add2

Row.

Add1

Row.

Add2

Row.

Add3

DIN

N

DIN

M

I/Ox

CE#

tWC

tDBSY

11h

Col.

Add1

81h

Col.

Add2

Row.

Add1

Row.

Add2

Row.

Add3

DIN

N

DIN

M

tWC

15h

A

tCBSYW

tWB

tADL

: Don’t care

CLE

WE#

ALE

R/B#

Col.

Add1

80h

Col.

Add2

Row.

Add1

Row.

Add2

Row.

Add3

DIN

N

DIN

M

I/Ox

CE#

tWC

tDBSY

11h

Col.

Add1

81h

Col.

Add2

Row.

Add1

Row.

Add2

Row.

Add3

DIN

N

DIN

M

tWC

10h

A

tPROG

tWB

tADL

A0-A14 : Valid

A15-A22 : Valid (Page M)

A23 : Fixed ‘Low’

A24 ~ A34 : Valid (Block J)

A0-A14 : Valid

A15-A22 : Valid( Page M)

A23 : Fixed ‘High’

A24 ~ A34 : Valid (Block K)

A0-A14 : Valid

A15-A22 : Valid( Page M+n)

A23 : Fixed ‘Low’

A24 ~ A34 : Valid (Block J)

A0-A14 : Valid

A15-A22 : Valid( Page M+n)

A23 : Fixed ‘High’

A24 ~ A34 : Valid (Block K)

Figure 28 : Multi-plane cache program operation timings

Notes:

1. tPROG = Program time for the last page + Program time for the (last -1)th page –

(command input cycle time + address input cycle time + Last page data loading time)

2. Make sure to terminate the operation with 80h-10h- command sequence. If the operation is

terminated by 80h-15h command sequences, monitor I/O5 (Ready/Busy) and I/O6 (Data Cache

Ready/Busy) by issuing Read Status Command (70h) and make sure the previous and current

Cache Page Program operation is completed. If the page program operation is completed, issue

FFh reset before next operation.

3. Selected Page address except A23 within two blocks must be same.

3.23. Block Erase Operation Timings

Figure 29 : Block erase operation timings

Codice articolo simile - H27UCG8T2BTR-BC

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Hynix Semiconductor	H27UCG8T2B	87Kb / 5P	NAND Flash(SLC,MLC,eMMC,E2NAND3.0,(Solid State Drive))

More results

Descrizione simile - H27UCG8T2BTR-BC

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
List of Unclassifed Man...	S846-SAS	250Kb / 2P	MLC Nand Flash
Hynix Semiconductor	H27UAG8T2B	1Mb / 61P	16Gb (2048M x 8bit) NAND Flash
Toshiba Semiconductor	TH58V128FT	1Mb / 32P	128Mbit (16M x 8bit) CMOS NAND E2PROM
Hynix Semiconductor	H27U1G8F2B	87Kb / 5P	NAND Flash(SLC,MLC,eMMC,E2NAND3.0,(Solid State Drive))
Toshiba Semiconductor	TC5832DC	1Mb / 38P	32 MBIT (4M x 8BIT) CMOS NAND E2PROM
Toshiba Semiconductor	TH58V128DC	1Mb / 32P	128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia??
WAGO Kontakttechnik Gmb...	752-9400	277Kb / 3P	Edge Computer; 2 x ETHERNET, 4 x USB, HDMI, DP; 4GB RAM; 64GB FLASH
WAGO Kontakttechnik Gmb...	752-9401	277Kb / 3P	Edge Computer; 2 x ETHERNET, 4 x USB, HDMI, DP; 8GB RAM; 64GB FLASH
Samsung semiconductor	K9F6408U0B-TCB0	416Kb / 27P	8M x 8 Bit NAND Flash Memory
Samsung semiconductor	K9F1208U0M-	1Mb / 41P	64M x 8 Bit NAND Flash Memory

More results

H27UCG8T2BTR-BC Scheda tecnica(PDF) 36 Page - Hynix Semiconductor

H27UCG8T2BTR-BC Scheda tecnica(HTML) 36 Page - Hynix Semiconductor

Codice articolo simile - H27UCG8T2BTR-BC

Descrizione simile - H27UCG8T2BTR-BC

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56

Scheda tecnica Scarica

Link URL