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H27UCG8T2BTR-BC Scheda tecnica(PDF) 11 Page - Hynix Semiconductor |
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H27UCG8T2BTR-BC Scheda tecnica(HTML) 11 Page - Hynix Semiconductor |
11 / 56 page H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash Rev 0.1 / Oct. 2012 11 Bus cycle I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 1st Cycle A0 A1 A2 A3 A4 A5 A6 A7 2nd Cycle A8 A9 A10 A11 A12 A13 A14 L(1) 3rd Cycle A15 A16 A17 A17 A19 A20 A21 A22 4th Cycle A23 A24 A25 A26 A27 A28 A29 A30 5th Cycle A31 A32 A33 A34 L(1) L(1) L(1) L(1) Notes: 1. L must be set to Low. 2. The device ignores any additional address input cycle than required. 3. The Address consists of column address (A0~A14), page address (A15 ~ A22), plane address (A23), and block address (A24 ~ the last address). 1.7. Addressing 1.8. Extended Blocks Arrangement The device offers 84 extended blocks to increase valid blocks. These blocks can be accessed when the block address A34 is „High‟. Block 0 Block 1 Block 2 Block 3 Block 4 Block 5 · · · Block 2045 Block 2046 Block 2047 Block 2048 Block 2049 · · · Block 2130 Block 2131 0000h 0001h 0002h 0003h 0004h 0005h · · · 07FDh 07FEh 07FFh 0800h 0801h · · · 0852h 0853h 0853h Row Address (Hexadecimal) Main Blocks (2048 Blocks) Extended Blocks (84 Blocks) |
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