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IRF1407S Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF1407S Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor IRF1407S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 75 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=78A 7.8 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 0.2 μ A IDSS Drain-Source Leakage Current VDS=75V; VGS= 0V;Tj=25℃ VDS=60V; VGS= 0V;Tj=150℃ 20 250 μ A VSDF Diode forward voltage ISD=78A, VGS = 0 Vs 1.3 V |
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