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54MTKB Scheda tecnica(PDF) 3 Page - International Rectifier |
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54MTKB Scheda tecnica(HTML) 3 Page - International Rectifier |
3 / 10 page 54-94-104MT..KB Series 3 Bulletin I27504 08/97 www.irf.com Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions V INS RMS isolation voltage 4000 V T J = 25oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise 500 V/µs T J = T J max., linear to 0.67 V DRM, of off-state voltage (*) gate open circuit Blocking (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90. Triggering Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions P GM Max. peak gate power 10 W T J = TJ max. P G(AV) Max. average gate power 2.5 I GM Max. peak gate current 2.5 A -V GT Max. peak negative 10 V gate voltage V GT Max. required DC gate 4.0 V TJ = - 40°C Anodesupply=6V,resistiveload voltage to trigger 2.5 TJ = 25°C 1.7 TJ = 125°C I GT Max. required DC gate 270 TJ = - 40°C Anodesupply=6V,resistiveload current to trigger 150 mA TJ = 25°C 80 TJ = 125°C V GD Max. gate voltage 0.25 V @ T J = T J max., ratedV DRM applied that will not trigger I GD Max. gate current 6 mA that will not trigger Thermal and Mechanical Specifications Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions T J Max. junction operating -40 to 125 °C temperature range T stg Max. storage temperature -40 to 125 °C range RthJC Max. thermal resistance, 0.52 0.39 0.34 K/W DC operation per single AC switch junction to case 1.05 0.77 0.69 DC operation per junction 0.56 0.40 0.36 180° Sine cond. angle per single AC switch 1.12 0.80 0.72 180° Sine cond. angle per junction R thCS Max. thermal resistance, 0.03 K/W Per module case to heatsink Mounting surface smooth, flat and greased T Mounting to heatsink 4 to 6 Nm torque ± 10% to terminal 3 to 4 wt Approximate weight 225 g A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. |
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