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QM3003K Scheda tecnica(PDF) 2 Page - uPI Group Inc. |
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QM3003K Scheda tecnica(HTML) 2 Page - uPI Group Inc. |
2 / 4 page 2 QM3003K P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-4A --- 26 32 mΩ VGS=-4.5V , ID=-2A --- 36 45 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 15.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge VDS=-15V , VGS=-4.5V , ID=-4A --- 12.6 --- nC Qgs Gate-Source Charge --- 4.52 --- Qgd Gate-Drain Charge --- 4.72 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-4A --- 4.8 --- ns Tr Rise Time --- 35 --- Td(off) Turn-Off Delay Time --- 42 --- Tf Fall Time --- 21 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1345 --- pF Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -4.8 A ISM Pulsed Source Current 2,4 --- --- -24 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-4A , dI/dt=100A/µs , TJ=25℃ --- 18.3 --- nS Qrr Reverse Recovery Charge --- 7.2 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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