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QM2702D Datasheet(Scheda tecnica) 2 Page - uPI Group Inc.

Numero della parte QM2702D
Dettagli  N-Ch 20V Fast Switching MOSFETs
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Produttore  UPI [uPI Group Inc.]
Homepage  http://www.ubiq-semi.com/
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QM2702D
N-Ch 20V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.024
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=14A
---
16
20
m
Ω
VGS=2.5V , ID=7A
---
22
28
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.7
1.2
V
△VGS(th)
VGS(th) Temperature Coefficient
---
-2.7
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±16V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=14A
---
30
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.9
3.8
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=14A
---
9.8
---
nC
Qgs
Gate-Source Charge
---
2.1
---
Qgd
Gate-Drain Charge
---
3
---
Td(on)
Turn-On Delay Time
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=14A
---
3.8
---
ns
Tr
Rise Time
---
12.2
---
Td(off)
Turn-Off Delay Time
---
19.6
---
Tf
Fall Time
---
8
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
772
---
pF
Coss
Output Capacitance
---
83
---
Crss
Reverse Transfer Capacitance
---
79
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
28
A
ISM
Pulsed Source Current
2,4
---
---
70
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=14A , dI/dt=100A/µs , TJ=25℃
---
7.3
---
nS
Qrr
Reverse Recovery Charge
---
2
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics




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