Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

KFM1216Q2M Scheda tecnica(PDF) 8 Page - Samsung semiconductor

Il numero della parte KFM1216Q2M
Spiegazioni elettronici  FLASH MEMORY
Download  88 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFM1216Q2M Scheda tecnica(HTML) 8 Page - Samsung semiconductor

Back Button KFM1216Q2M Datasheet HTML 4Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 5Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 6Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 7Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 8Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 9Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 10Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 11Page - Samsung semiconductor KFM1216Q2M Datasheet HTML 12Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 88 page
background image
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
8
1. FEATURES
• Design Technology: 0.12µm
• Voltage Supply
- 1.8V device(KFM1216Q2M) : 1.7V~1.95V
• Organization
- Host Interface:16bit
• Internal BufferRAM(5K Bytes)
- 1KB for BootRAM, 4KB for DataRAM
• NAND Array
- Page Size : (2K+64)bytes
- Block Size : (128K+4K)bytes
♦ Architecture
• Host Interface type
- Synchronous Burst Read
: Clock Frequency: up to 54MHz(1.8V device)
: Linear Burst - 4 , 8 , 16 words with wrap-around
: Continuous Sequential Burst(1K words)
- Asynchronous Random Read
: Access time of 76ns
- Asynchronous Random Write
• Programmable Read latency
• Multiple Sector Read
- Read multiple sectors by Sector Count Register(up to 4 sectors)
• Reset Mode
- Cold Reset / Warm Reset / Hot Reset / NAND Flash Reset
• Power dissipation (typical values)
- Standby current : 10uA
- Asynchronous Read current : 8mA
- Synchronous Burst Read current(54MHz) : 12mA
- Load current : 20mA
- Program current: 20mA
- Erase current: 15mA
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
♦ Performance
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection
- Write Protection mode for BootRAM
- Write Protection mode for NAND Flash Array
- Write protection during power-up
- Write protection during power-down
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
♦ Hardware Features
• Handshaking Feature
- INT pin: Indicates Ready / Busy of MuxOneNAND
- Polling method: Provides a software method of detecting the Ready / Busy status of MuxOneNAND
• Detailed chip information by ID register
♦ Software Features
• Package
- 48ball, 12mm x 9.5mm x max 1.0mmt , 0.5mm ball pitch FBGA
♦ Packaging


Codice articolo simile - KFM1216Q2M

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
PACELEADER INDUSTRIAL
KFM10100C-D PACELEADER-KFM10100C-D Datasheet
310Kb / 3P
   SCHOTTKY BARRIER RECTIFIER
KFM10150C-D PACELEADER-KFM10150C-D Datasheet
310Kb / 3P
   SCHOTTKY BARRIER RECTIFIER
KFM10200C-D PACELEADER-KFM10200C-D Datasheet
310Kb / 3P
   SCHOTTKY BARRIER RECTIFIER
KFM1020C-D PACELEADER-KFM1020C-D Datasheet
310Kb / 3P
   SCHOTTKY BARRIER RECTIFIER
KFM1030C-D PACELEADER-KFM1030C-D Datasheet
310Kb / 3P
   SCHOTTKY BARRIER RECTIFIER
More results

Descrizione simile - KFM1216Q2M

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Samsung semiconductor
K9XXG08UXB SAMSUNG-K9XXG08UXB Datasheet
564Kb / 36P
   FLASH MEMORY
K9F1208U0C SAMSUNG-K9F1208U0C Datasheet
685Kb / 38P
   FLASH MEMORY
logo
Micron Technology
MT28F004B5 MICRON-MT28F004B5 Datasheet
376Kb / 32P
   FLASH MEMORY
MT28F320A18 MICRON-MT28F320A18 Datasheet
558Kb / 37P
   FLASH MEMORY
MT28F008B3 MICRON-MT28F008B3 Datasheet
416Kb / 30P
   FLASH MEMORY
MT28F002B5 MICRON-MT28F002B5 Datasheet
575Kb / 31P
   FLASH MEMORY
logo
Samsung semiconductor
KFG1216Q2A SAMSUNG-KFG1216Q2A Datasheet
1Mb / 114P
   FLASH MEMORY
logo
SPANSION
MBM29F800TA SPANSION-MBM29F800TA Datasheet
596Kb / 49P
   FLASH MEMORY
logo
Samsung semiconductor
K9F2G08UXA SAMSUNG-K9F2G08UXA Datasheet
999Kb / 44P
   FLASH MEMORY
KM29V32000T SAMSUNG-KM29V32000T Datasheet
1Mb / 26P
   FLASH MEMORY
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com