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2SK1460LS Scheda tecnica(PDF) 1 Page - Sanyo Semicon Device |
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2SK1460LS Scheda tecnica(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK1460LS No.3463-1/4 Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 7 A Allowable Power Dissipation PD 2.0 W Tc=25 °C40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 900 V Zero-Gate Voltage Drain Current IDSS VDS=900V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V Forward Transfer Admittance yfs VDS=20V, ID=2A 1.0 2.0 S Marking : K1460 Continued on next page. Features • Low ON-resistance. • Ultrahigh-speed switching. • Micaless package facilitating mounting. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN3463B 2SK1460LS Package Dimensions unit : mm 2078C [2SK1460LS] N3001 TS IM TA-3433 / 61599 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO) Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 |
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