Motore di ricerca datesheet componenti elettronici |
|
NTB082N65S3F Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
NTB082N65S3F Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor NTB082N65S3F · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 650 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3 5 V VSD Diode Forward On-Voltage IS= 20A ;VGS= 0 1.3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=20A 82 mΩ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 10 µA |
Codice articolo simile - NTB082N65S3F |
|
Descrizione simile - NTB082N65S3F |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |