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STF10NM65N Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STF10NM65N Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor STF10NM65N · FEATURES · With TO-220F package · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · Load switch · Power management · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ± 25 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 9 5.7 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation @TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 5 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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