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2SK971 Scheda tecnica(PDF) 5 Page - Hitachi Semiconductor |
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2SK971 Scheda tecnica(HTML) 5 Page - Hitachi Semiconductor |
5 / 7 page 2SK971 1000 500 200 100 50 20 10 0.5 1.0 5 50 Reverse Drain Current IDR (A) 10 2 20 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 30 10 010 20 50 Drain to Source Voltage VDS (V) 30 100 40 VGS = 0 f = 1MHz Ciss Coss Crss 100 80 60 40 20 08 24 32 Gate Charge Qg (nc) 16 20 16 12 8 4 0 Dynamic Input Characteristics 40 ID = 15 A VDS VGS VDD = 50 V 10 V 25 V VDD = 50 V 25 V 10 V Switching Characteristics 500 200 100 50 20 10 5 0.2 0.5 1.0 2 5 20 Drain Current ID (A) 10 td (off) tf tr VGS = 10 V PW = 2 µs, duty < 1 % td (on) |
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