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IKB06N60T Scheda tecnica(PDF) 3 Page - List of Unclassifed Manufacturers

Il numero della parte IKB06N60T
Spiegazioni elettronici  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Produttore elettronici  ETC [List of Unclassifed Manufacturers]
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IKB06N60T
TrenchStop series
IKP06N60T
^
Power Semiconductors
3
Rev. 2 Oct-04
Dynamic Characteristic
Input capacitance
Ciss
-
368
-
Output capacitance
Coss
-
28
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
11
-
pF
Gate charge
QGate
VCC=480V, IC=6A
VGE=15V
-
42
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
TO-220-3-1
TO-263-3-2
-
7
-
nH
Short circuit collector current
1)
IC(SC)
VGE=15V,tSC
≤5µs
VCC = 400V,
Tj = 25
°C
-
55
-
A
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9
-
Rise time
tr
-
6
-
Turn-off delay time
td(off)
-
130
-
Fall time
tf
-
58
-
ns
Turn-on energy
Eon
-
0.09
-
Turn-off energy
Eoff
-
0.11
-
Total switching energy
Ets
Tj=25
°C,
VCC=400V,IC=6A,
VGE=0/15V,
RG=23
Ω,
Lσ
2) =60nH,
Cσ
2) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.2
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
123
-
ns
Diode reverse recovery charge
Qrr
-
190
-
nC
Diode peak reverse recovery current
Irrm
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25
°C,
VR=400V, IF=6A,
diF/dt=550A/
µs
-
450
-
A/
µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.


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