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FDD306P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDD306P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page 3 www.fairchildsemi.com FDD306P Rev. C Typical Characteristics 0 9 18 27 36 45 54 01234 -V DS, DRAIN-SOURCE VOLTAGE (V) -1.8V -2.0V -2.5V V GS = -4.5V -3.0V -3.5V -4.0V 0.5 1 1.5 2 2.5 09 18 27 36 45 54 -I D, DRAIN CURRENT (A) V GS = -1.8V -2.0V -2.5V -4.5V -3.0V -3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( °C) I D = -6.7A V GS = -4.5V 0 0.02 0.04 0.06 0.08 0.1 02468 10 -V GS, GATE TO SOURCE VOLTAGE (V) I D = -3.4A T A = 125°C T A = 25°C Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 9 18 27 36 45 54 01 23 4 -V GS , GATE TO SOURCE VOLTAGE (V) T A = -55° C 25 °C V DS = - 5V 125 °C 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) T A = 125°C 25 °C -55 °C V GS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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