FDD306P datasheet(3/5 Pages) FAIRCHILD

Il numero della parte	FDD306P

Spiegazioni elettronici	P-Channel 1.8V Specified PowerTrench MOSFET

Download	5 Pages

Scroll/Zoom	100%

Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

Logo

3 / 5 page

3

www.fairchildsemi.com

FDD306P Rev. C

Typical Characteristics

0

9

18

27

36

45

54

01234

-V

DS, DRAIN-SOURCE VOLTAGE (V)

-1.8V

-2.0V

-2.5V

V

GS = -4.5V

-3.0V

-3.5V

-4.0V

0.5

1

1.5

2

2.5

09

18

27

36

45

54

-I

D, DRAIN CURRENT (A)

V

GS = -1.8V

-2.0V

-2.5V

-4.5V

-3.0V

-3.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.8

0.9

1

1.1

1.2

1.3

1.4

-50

-25

0

25

50

75

100

125

150

175

T

J, JUNCTION TEMPERATURE ( °C)

I

D = -6.7A

V

GS = -4.5V

0

0.02

0.04

0.06

0.08

0.1

02468

10

-V

GS, GATE TO SOURCE VOLTAGE (V)

I

D = -3.4A

T

A = 125°C

T

A = 25°C

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

9

18

27

36

45

54

01

23

4

-V

GS , GATE TO SOURCE VOLTAGE (V)

T

A = -55° C

25

°C

V

DS = - 5V

125

°C

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

-V

SD, BODY DIODE FORWARD VOLTAGE (V)

T

A = 125°C

25

°C

-55

°C

V

GS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Codice articolo simile - FDD306P

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
First Silicon Co., Ltd	FDD30U60J1	198Kb / 4P	ULTRAFAST RECOVERY RECTIFIER 2022. 06. 13 Revision No : 0

More results

Descrizione simile - FDD306P

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FDG6308P	85Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	FDW254PZ	230Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	FDJ1027P	1Mb / 6P	P-Channel 1.8V Specified PowerTrench MOSFET
ON Semiconductor	FDC606P	215Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET September-2017, Rev. 5
Fairchild Semiconductor	SI3445DV	90Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	SI3447DV	90Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	SI6467DQ	98Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	FDC606P	154Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	FDN304P	106Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET
	FDS-4465	371Kb / 5P	P-Channel 1.8V Specified PowerTrench??MOSFET
	FDG330P	150Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET

More results

FDD306P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

FDD306P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

Codice articolo simile - FDD306P

Descrizione simile - FDD306P

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL