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ST180S04P0V Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte ST180S04P0V
Spiegazioni elettronici  PHASE CONTROL THYRISTORS
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

ST180S04P0V Scheda tecnica(HTML) 2 Page - International Rectifier

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ST180S Series
2
Bulletin I25165 rev. C 03/03
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
VV
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
ST180S
30
I
T(AV)
Max. average on-state current
200
A
180° conduction, half sine wave
@ Case temperature
85
°C
I
T(RMS)
Max. RMS on-state current
314
A
DC @ 76°C case temperature
I
TSM
Max. peak, one-cycle
5000
t = 10ms
No voltage
non-repetitive surge current
5230
t = 8.3ms
reapplied
4200
t = 10ms
100% V
RRM
4400
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
125
t = 10ms
No voltage
Initial T
J
= T
J
max.
114
t = 8.3ms
reapplied
88
t = 10ms
100% V
RRM
81
t = 8.3ms
reapplied
I
2
√t
Maximum I
2
√t for fusing
1250
KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.75
V
I
pk
= 570A, T
J
= 125°C, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
1.08
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.18
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.14
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
ST180S
Units Conditions
1.14
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
V
m
mA
T
J
= T
J
max, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
Ω, t
r
1µs
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt = 20A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100
Ω, t
p = 500µs
Parameter
ST180S
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
µs
1000
A/µs


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