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MC100EP140D Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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MC100EP140D Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 8 page MC100EP140 http://onsemi.com 4 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –3.6 V to –3.0 V (Note 5) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 55 70 85 60 74 90 63 78 93 mA VOH Output HIGH Voltage (Note 6) –1145 –1020 –895 –1145 –1020 –895 –1145 –1020 –895 mV VOL Output LOW Voltage (Note 6) –1545 –1420 –1295 –1545 –1420 –1295 –1545 –1420 –1295 mV VIH Input HIGH Voltage (Single–Ended) –1225 –880 –1225 –880 –1225 –880 mV VIL Input LOW Voltage (Single–Ended) –1945 –1625 –1945 –1625 –1945 –1625 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 5. Input and output parameters vary 1:1 with VCC. 6. All loading with 50 W to VCC–2.0 volts. AC CHARACTERISTICS VCC = 0 V; VEE = –3.0 V to –3.6 V or VCC = 3.0 V to 3.6 V; VEE = 0 V (Note 7) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 4 Fmax/JITTER) > 2 > 2 > 2 GHz tPLH, tPHL Propagation Delay to R to U, FB to D Output Differential FB to U, R to D 300 400 450 600 6002 800 325 450 475 650 625 850 350 500 500 700 650 900 ps tJITTER Cycle–to–Cycle Jitter (See Figure 4 Fmax/JITTER) .2 < 1 .2 < 1 .2 < 1 ps VPP Input Voltage Swing 400 800 1200 400 800 1200 400 800 1200 mV tr tf Output Rise/Fall Times Q, Q (20% – 80%) 50 90 180 60 100 200 70 120 220 ps 7. Measured using a 750 mV VPP pk–pk, 50% duty cycle, clock source. All loading with 50 W to VCC–2.0 V. 0 100 200 300 400 500 600 0 400 800 1200 1600 2000 2400 Figure 4. Fmax/Jitter FREQUENCY (MHz) 1 2 3 4 5 6 (JITTER) |
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