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BTS3080EJ Scheda tecnica(PDF) 16 Page - Infineon Technologies AG |
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BTS3080EJ Scheda tecnica(HTML) 16 Page - Infineon Technologies AG |
16 / 45 page Datasheet 16 Rev. 1.0 2016-09-12 HITFET - BTS3080EJ Smart Low-Side Power Switch Power Stage 5.3.1.1 Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3080EJ. This energy can be calculated by the following equation: (5.1) Following equation simplifies under assumption of RL = 0 (5.2) For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 8 Figure 13 Maximum load inductance for single pulse L = f(IL), TJ(0) = TJ,start = 150°C, VBAT = 13.5 V 5.4 Reverse Current capability A reverse battery situation means the OUT pin is pulled below GND potentials to -VBAT via the load ZL. L L CLAMP OUT BAT L L L CLAMP OUT BAT CLAMP OUT R L I V V I R R V V V × ⎥ ⎥ ⎦ ⎤ ⎢ ⎢ ⎣ ⎡ + ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − × − × − × = ) ( ) ( ) ( 1 ln E ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − − × = ) ( 2 1 2 1 CLAMP OUT BAT BAT L V V V LI E 1 10 100 1000 0,75 1,5 3 6 IL [A] |
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