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S29GL512N Scheda tecnica(PDF) 55 Page - Cypress Semiconductor |
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S29GL512N Scheda tecnica(HTML) 55 Page - Cypress Semiconductor |
55 / 92 page Document Number: 002-01522 Rev. *B Page 55 of 92 S29GL512N S29GL256N S29GL128N Legend X = Don’t care. RA = Read Address. RD = Read Data. PA = Program Address. Addresses latch on the falling edge of WE# or CE# pulse, whichever occurs later. PD = Program Data. Data latches on the rising edge of WE# or CE# pulse, whichever occurs first. SA = Sector Address. Any address that falls within a specified sector. See Tables – for sector address ranges. WBL = Write Buffer Location. Address must be within the same write buffer page as PA. WC = Word Count. Number of write buffer locations to load minus 1. Notes 1. See Table on page 10 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. 4. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data). 5. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset command to return reading array data. 6. No unlock or command cycles required when bank is reading array data. 7. Reset command is required to return to reading array data in certain cases. See Reset Command on page 43 for details. 8. Data in cycles 5 and 6 are listed in Table on page 34. 9. The data is 00h for an unprotected sector and 01h for a protected sector. PPB Status Read provides the same data but in inverted form. 10. If DQ7 = 1, region is factory serialized and protected. If DQ7 = 0, region is unserialized and unprotected when shipped from factory. See Secured Silicon Sector Flash Memory Region on page 39 for more information. 11. Command is valid when device is ready to read array data or when device is in autoselect mode. 12. Total number of cycles in the command sequence is determined by the number of words written to the write buffer. 13. Command sequence resets device for next command after write-to-buffer operation. 14. Requires Entry command sequence prior to execution. Unlock Bypass Reset command is required to return to reading array data. 15. System may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 16. Erase Resume command is valid only during the Erase Suspend mode. 17. Requires Entry command sequence prior to execution. Secured Silicon Sector Exit Reset command is required to exit this mode; device may otherwise be placed in an unknown state. Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Erase/Program Suspend (15) 1XXX B0 Erase/Program Resume (16) 1XXX 30 Entry 3 555 AA 2AA 55 555 88 Program (17) 4 555 AA 2AA 55 555 A0 PA PD Read (17) 1 00 Data Exit (17) 4 555 AA 2AA 55 555 90 XXX 00 Memory Array Commands (x16) Command Sequence (Notes) Bus Cycles (Notes 1–5) First Second Third Fourth Fifth Sixth Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data |
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