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S29GL512N Scheda tecnica(PDF) 55 Page - Cypress Semiconductor

Il numero della parte S29GL512N
Spiegazioni elettronici  512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
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Produttore elettronici  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL512N Scheda tecnica(HTML) 55 Page - Cypress Semiconductor

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Document Number: 002-01522 Rev. *B
Page 55 of 92
S29GL512N
S29GL256N
S29GL128N
Legend
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE# or CE# pulse, whichever occurs later.
PD = Program Data. Data latches on the rising edge of WE# or CE# pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector. See Tables – for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes
1. See Table on page 10 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles.
4. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data).
5. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset
command to return reading array data.
6. No unlock or command cycles required when bank is reading array data.
7. Reset command is required to return to reading array data in certain cases. See Reset Command on page 43 for details.
8. Data in cycles 5 and 6 are listed in Table on page 34.
9. The data is 00h for an unprotected sector and 01h for a protected sector. PPB Status Read provides the same data but in inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 = 0, region is unserialized and unprotected when shipped from factory. See Secured Silicon Sector Flash
Memory Region on page 39 for more information.
11. Command is valid when device is ready to read array data or when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined by the number of words written to the write buffer.
13. Command sequence resets device for next command after write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock Bypass Reset command is required to return to reading array data.
15. System may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only
during a sector erase operation.
16. Erase Resume command is valid only during the Erase Suspend mode.
17. Requires Entry command sequence prior to execution. Secured Silicon Sector Exit Reset command is required to exit this mode; device may otherwise be placed in an
unknown state.
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase/Program Suspend (15)
1XXX
B0
Erase/Program Resume (16)
1XXX
30
Entry
3
555
AA
2AA
55
555
88
Program (17)
4
555
AA
2AA
55
555
A0
PA
PD
Read (17)
1
00
Data
Exit (17)
4
555
AA
2AA
55
555
90
XXX
00
Memory Array Commands (x16)
Command Sequence
(Notes)
Bus Cycles (Notes 15)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data


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