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NCV59749 Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte NCV59749
Spiegazioni elettronici  3.0 A, Dual-Rail Very Low?륞ropout Linear Regulator
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Input Voltage Range
VIN
−0.3 to +6
V
Input Voltage Range
VBIAS
−0.3 to +6
V
Enable Voltage Range
VEN
−0.3 to +6
V
Power-Good Voltage Range
VPG
−0.3 to +6
V
PG Sink Current
IPG
0 to +1.5
mA
SS Pin Voltage Range
VSS
−0.3 to +6
V
Feedback Pin Voltage Range
VFB
−0.3 to +6
V
Output Voltage Range
VOUT
−0.3 to (VIN + 0.3) ≤ 6
V
Maximum Output Current
IOUT
Internally Limited
Output Short Circuit Duration
Indefinite
Continuous Total Power Dissipation
PD
See Thermal Characteristics Table and Formula
Maximum Junction Temperature
TJMAX
+125
°C
Storage Junction Temperature Range
TSTG
−55 to +150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002.
ESD Machine Model tested per AEC−Q100−003.
Latch-up Current Maximum Rating
≤150 mA per AEC−Q100−004.
Table 3. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, QFN20, 5x5, 0.65P package
Thermal Resistance, Junction−to−Ambient (Note 5)
RqJA
30.5
°C/W
Thermal Resistance, Junction−to−Case (bottom) (Note 6)
RqJC
4.1
°C/W
3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
4. Thermal data are derived by thermal simulations based on methodology specified in the JEDEC JESD51 series standards. The following
assumptions are used in the simulations:
− This data was generated with only a single device at the center of a high−K (2s2p) board with 3 in x 3 in copper area which follows the
JEDEC51.7 guidelines.
− The exposed pad is connected to the PCB ground layer through a 4x4 thermal via array. Vias are 0.3 mm diameter, plated.
− Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage.
5. The junction−to−ambient thermal resistance under natural convection is obtained in a simulation on a high−K board, following the JEDEC51.7
guidelines with assumptions as above, in an environment described in JESD51−2a.
6. The junction−to−case (bottom) thermal resistance is obtained by simulating a cold plate test on the IC exposed pad. Test description can
be found in the ANSI SEMI standard G30−88.
Table 4. RECOMMENDED OPERATING CONDITIONS (Note 7)
Rating
Symbol
Min
Max
Unit
Input Voltage
VIN
VOUT + VDO
5.5
V
Bias Voltage
VBIAS
2.7
5.5
V
Junction Temperature
TJ
−40
125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
7. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.


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