Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

KM29U64000T Scheda tecnica(PDF) 9 Page - Samsung semiconductor

Il numero della parte KM29U64000T
Spiegazioni elettronici  8M x 8 Bit NAND Flash Memory
Download  26 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM29U64000T Scheda tecnica(HTML) 9 Page - Samsung semiconductor

Back Button KM29U64000T Datasheet HTML 5Page - Samsung semiconductor KM29U64000T Datasheet HTML 6Page - Samsung semiconductor KM29U64000T Datasheet HTML 7Page - Samsung semiconductor KM29U64000T Datasheet HTML 8Page - Samsung semiconductor KM29U64000T Datasheet HTML 9Page - Samsung semiconductor KM29U64000T Datasheet HTML 10Page - Samsung semiconductor KM29U64000T Datasheet HTML 11Page - Samsung semiconductor KM29U64000T Datasheet HTML 12Page - Samsung semiconductor KM29U64000T Datasheet HTML 13Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 26 page
background image
KM29U64000T, KM29U64000IT
FLASH MEMORY
9
Identifying Invalid Block(s)
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically,
an invalid block will contain a single bad bit. The information regarding the invalid block(s) is so called as the invalid block informa-
tion. The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data. Devices with invalid
block(s) have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND
Flash, however, is fully guaranteed to be a valid block.
NAND Flash Technical Notes
All device locations are erased(FFh) except locations where the invalid block information is written prior to shipping.
Since the
invalid block information is also erasable in most cases, it is impossible to recover the information once it has been
erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block
information and create the invalid block table via the following suggested flow chart(Figure 1). Any intentional era-
sure of the original invalid block information is prohibited.
* Check "FFH" on the 1st and 2nd page
Figure 1. Flow chart to create invalid block table.
Start
Set Block Address = 0
Check "FFH" ?
Increment Block Address
Last Block ?
End
No
Yes
Yes
Create (or update)
No
Invalid Block(s) Table


Codice articolo simile - KM29U64000T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Samsung semiconductor
KM29U128IT SAMSUNG-KM29U128IT Datasheet
481Kb / 26P
   16M x 8 Bit NAND Flash Memory
KM29U128T SAMSUNG-KM29U128T Datasheet
481Kb / 26P
   16M x 8 Bit NAND Flash Memory
More results

Descrizione simile - KM29U64000T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Samsung semiconductor
K9F6408U0A-TCB0 SAMSUNG-K9F6408U0A-TCB0 Datasheet
347Kb / 26P
   8M x 8 Bit NAND Flash Memory
K9F6408U0M-TCB0 SAMSUNG-K9F6408U0M-TCB0 Datasheet
480Kb / 26P
   8M x 8 Bit NAND Flash Memory
KM29V64001T SAMSUNG-KM29V64001T Datasheet
1Mb / 24P
   8M X 8 BIT NAND FLASH MEMORY
KM29V64001TS SAMSUNG-KM29V64001TS Datasheet
1Mb / 22P
   8M X 8 BIT NAND FLASH MEMORY
K9F6408U0C SAMSUNG-K9F6408U0C Datasheet
784Kb / 30P
   8M x 8 Bit NAND Flash Memory
K9F6408U0B-TCB0 SAMSUNG-K9F6408U0B-TCB0 Datasheet
416Kb / 27P
   8M x 8 Bit NAND Flash Memory
K9F6408Q0C SAMSUNG-K9F6408Q0C Datasheet
499Kb / 29P
   8M x 8 Bit Bit NAND Flash Memory
K9F2808Q0C SAMSUNG-K9F2808Q0C Datasheet
583Kb / 33P
   16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
KM29V64000TS SAMSUNG-KM29V64000TS Datasheet
1Mb / 22P
   8M X 8 BIT NAND FLSH MEMORY
logo
Fujitsu Component Limit...
MB84VB2000 FUJITSU-MB84VB2000 Datasheet
314Kb / 28P
   8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com